Structure of ac light-emitting diode dies

ABSTRACT

A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the LED unit may continuously emit light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply. Since each AC LED micro-die is operated forwardly, the structure of AC LED dies also provides protection from electrical static charge (ESD) and may operate under a high voltage.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of co-pending application Ser. No.12/149,852, filed on May 9, 2008, which is a Divisional of applicationSer. No. 10/994,361, filed on Nov. 23, 2004, now U.S. Pat. No.7,531,843, for which priority is claimed under 35 U.S.C. §120; and thisapplication claims priority of Application No. 093126201 filed inTaiwan, R.O.C. on Aug. 31, 2004 under 35 U.S.C. §119, the entirecontents of all of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of Invention

The invention relates to a structure of light-emitting diodes (LED), andparticularly to a structure of LED dies with an alternating current (AC)loop (a structure of AC LED dies).

2. Related Art

A light-emitting diode (LED) emits light based on its semi-conductivecharacteristics, in contrast to the heating light-emitting principle ofa fluorescent lamp, and is thus called a cold light. The LED provides anumber of advantages such as high endurance, long lifetime, compactness,low power consumption and so forth. Furthermore, no pernicious materialsuch as mercury is contained in the LED. Therefore, there are highexpectations with respect to the LEDs for being a light source in dailylife in the current lighting market.

However, prior LEDs are generally limited in their acceptable powerlevels. Most LEDs may be fed with only low DC voltages and may bedamaged if high voltages or AC voltages are applied thereon. Because ofthis, a DC voltage conversion circuit is generally used to transform theexternal power supply used by such LEDs. In operating an LED by use of alow DC voltage, the LED has its characteristic curve of thecurrent-voltage relation, as shown in FIG. 1A. As shown, when thevoltage is forwardly applied, the LED is conducted and light is emittedthere from. On the other hand, if a reverse voltage is applied, the LEDbreaks down and no light is emitted. Further, in practical usage the LEDis often connected in series or parallel with several such LEDs, such asthose used in traffic light apparatuses such as stop light apparatuses.As shown in FIG. 2, the externally supplied AC voltage 11 is firstreduced in its level by means of a conversion circuit 12 and thenconverted into a DC voltage corresponding thereto. Then the converted DCvoltage is fed into a plurality of LEDs connected with one another inseries or in parallel as mentioned above, in which LEDs cannot be usedwhen reverse power is supplied.

However, once a single LED arranged among the plurality of LEDs isdamaged, the set of LEDs in which the damaged LED resides is also likelyto become damaged and the whole of the loop formed with the damaged LEDincluded is badly affected. To reduce this occurrence, the number ofLEDs connected in series is generally reduced as much as possible.Unfortunately, the total amount of wires used for these LEDs in aspecific application is unavoidably increased and the power consumptionincreases correspondingly. Furthermore, the voltage at an end of one ofthe wires is insufficient and thus causes uneven luminance of the LEDs.

There is another serious problem with a low DC voltage operated ALInGaNLED. When such a LED is assembled and processed, electrical staticdischarge (ESD) is apt to occur. When this occurs, an instantaneous highreverse voltage is burst forth and the LED is damaged.

To resolve the above-mentioned shortcomings, circuit assembly and diemanufacturing are two generally adopted solutions.

The circuit assembly scheme may be seen in U.S. Pat. No. 6,547,249. Thispatent discloses an additional diode arranged in a reverse orientationand connected in parallel to protect an LED-based circuit to preventsudden ESD or an exceptional current or voltage attack. In another U.S.Pat. No. 5,936,599, LEDs in an LED based circuit are arranged in areverse orientation and connected in parallel, and inductors andcapacitors are introduced in the circuit. In this case, an AC voltageand a high voltage may be used by the LEDs. However, although theproblem of high power consumption may be overcome by such circuitassembly schemes, the corresponding large volume of the LED basedcircuit considerably limits its actual applicable range.

An example of the die manufacturing scheme may be seen in U.S. Pat. No.6,547,249, in which LED dies are manufactured as a matrix form andconnections of the LED dies are arranged in the same orientation inseries and in parallel. Although such LEDs may be operated with a highvoltage, they may still not be applied with an AC voltage. In thispatent, an arrangement for protection of breakdown of the LEDs is alsoprovided by connecting a diode with the LEDs in a variety ofcombinations where the LEDs may also be arranged in mutually reverseorientations and connected with each other but should be disposed over asubmount and then connected with the LED matrix in parallel. Accordingto this patent, the LED die 91 has a structure shown in FIG. 1B, and hasan equivalent circuit shown in FIG. 1C, in which the LED 91 is connectedin parallel with two mutually oriented Zener diodes 92 and 93, or aconnection may be provided to form a loop as shown in FIG. 1D. Thecurrent-voltage relation curves corresponding to the equivalent circuitsin FIG. 1C and FIG. 1D are shown in FIG. 1E and FIG. 1F respectively.

Also referring to U.S. Pat. No. 6,635,902, the LED dies are alsomanufactured as a matrix form while the LEDs are oriented the same andconnected in series. Although the LEDs may be operated with a highvoltage, they also have the problem of not being capable of operationwith AC voltage.

SUMMARY OF THE INVENTION

An object of the invention is therefore to provide a structure oflight-emitting diode (LED) dies having an alternating current (AC) loopabbreviated as a structure of AC LED dies, on which an AC power supplymay be applied directly to considerably broaden applicable range.

To achieve the above object, the structure of AC LED dies according tothe invention is formed with at least one unit of AC LED micro-diesdisposed on a chip. The unit of AC LED micro-dies comprises two LEDmicro-dies arranged in mutually reverse orientations and connected witheach other in parallel, to which an AC power supply may be applied sothat the unit of AC LED micro-dies continuously emits light in responseto a positive-half wave voltage and a negative-half wave voltage in theAC power supply respectively. Since each AC LED micro-die is operatedforwardly, the structure of the AC LED dies also provides protectionfrom electric static charge (ESD) and may operate under a high voltage.

In practical usage, the structure of the AC LED dies may be provided ina flipped form or a faced-up form. Also, each of the LED dies in thestructure of the AC LED dies may correspond to the same wavelength ordifferent wavelengths with those of the other LEDs in the unit of AC LEDdies. Thus the structure of AC LED dies may be used in a widerapplicable range.

The objects, constructions, features and functions of the invention maybe better understood through the following detailed description withrespect to the preferred embodiments thereof in connection with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a characteristic curve diagram of a prior light-emittingdiode (LED) die;

FIGS. 1B-1D are schematic illustrations of a prior LED die produced byLumileds;

FIGS. 1E-1F are characteristic curve diagrams of the LED die shown inFIGS. 1B-1D;

FIG. 2 is an illustration of the prior LED in use;

FIG. 3 is a schematic diagram of a structure of LED dies having analternating current (AC) loop (a structure of AC LED die) according tothe invention;

FIG. 4A is an equivalent circuit diagram of the structure of AC LED diesshown in

FIG. 3;

FIG. 4B is a characteristic curve diagram of the structure of AC LEDdies shown in

FIG. 3.

FIG. 5 is a schematic diagram describing a manufacturing of thestructure of AC LED dies;

FIG. 6 is a schematic diagram illustrating a package of the structure ofAC LED dies shown in FIG. 3;

FIG. 7 is a schematic diagram illustrating a flip-chip structure of theAC LED dies shown in FIG. 3;

FIG. 8 is a variant of the equivalent circuit shown in FIG. 4A;

FIG. 9A is the structure of AC LED dies according to another embodimentof the invention;

FIG. 9B is a variant of the structure of AC LED dies shown in FIG. 9A;

FIGS. 10A and 10B are illustrations of a plurality of structures of ACLED dies connected in a matrix form according to the invention;

FIG. 11 is an equivalent circuit diagram of the matrix-formed pluralityof structures of AC LED dies shown in FIGS. 10A and 10B; and

FIGS. 12A-12F are illustrations of a process flow of the manufacturingof the structure of AC LED dies according to the invention.

DETAILED DESCRIPTION OF THE INVENTION

A structure of light-emitting diode (LED) dies having an alternatingcurrent (AC) loop, which may be fed with a direct AC power supply, isdisclosed in the invention (abbreviated as a structure of AC LED dies).The structure of AC LED dies comprises at least a unit 50 of AC LEDmicro-dies, which will be described in the following. Referring to FIG.3, the unit of AC LED micro-dies comprises a first LED micro-die and asecond LED micro-die 21 and 22 arranged in mutually reverse orientationsand connected in parallel. The unit of AC LED micro-dies has anequivalent circuit as shown in FIG. 4A. Since the first and second LEDmicro-dies 21 and 22 are oriented reversely and connected in parallel,the first LED micro-die 21 emits light when a positive-half wave voltagein the AC power supply is applied, while the second LED micro-die 22emits light when a negative-half wave voltage in the AC power supply isapplied. Therefore, the unit of LED micro-dies may emit lightcontinuously whenever a proper AC power supply is provided. For thisreason, the above-mentioned terms “AC loop”, “AC LED dies” and “AC LEDmicro-dies” are used.

As is shown in FIG. 3, the unit 50 of micro-dies is fabricated on asubstrate 100. Two layers 102 and 104 of a first conductivity type aresupported on the substrate and separated from each other. The layer 102has a wide end 102W and a narrow end 102N. Similarly, the layer 104 hasa wide end 104W and a narrow end 102N. Two layers 106 and 108 of asecond conductivity type are supported respectively on the two layers102 and 104 with the first conductivity type. Like the layers 102 and104, the layers 106 and 108 have wide ends (106W and 108W) and narrowends (106N and 108N). A rear pad 110 is formed on the layer 104 of thefirst conductivity type, adjacent its narrow end 104N. A rear pad 112 isformed on the layer 106 of the second conductivity type, adjacent itswide end 106W. A rear conductive bridge 114 connects the rear pads 110and 112. A front pad 116 is formed on the layer 102 of the firstconductivity type, adjacent its narrow end 102N. A front pad 118 isformed on the layer 108 of the second conductivity type, adjacent itsend 108W. A front bridge 120 connects the front pads 116 and 118.

As is also shown in FIG. 3, the substrate 100 is rectangular and has twopairs of parallel sides, including front and rear parallel sides 100Fand 100R. The micro-die 21 has an edge 122, and an anode (at pad 118)and a cathode (at pad 110) disposed adjacent opposite ends of the edge122. As FIG. 3 illustrates, the micro-dies 21 and 22 complement eachother in shape so as to occupy a substantially rectangular region. Themicro-die 22 has an edge 124 and an anode and cathode disposed adjacentopposite ends of the edge 124. The edge 122 is disposed at an acuteangle α (illustrated with the aid of a dotted line) to the front andrear edges 100F and 100R. Similarly, the edge 124 is disposed at anacute angle (corresponding to the angle α and illustrated with the aidof a dotted line, but not marked with a reference character in order toavoid cluttering the drawing) with respect to the front and rear edges100F and 100R.

Furthermore, the characteristic curve associated with thecurrent-voltage relation of the unit of AC LED micro-dies is provided inFIG. 4 b. Since each LED micro-die in the unit is operated forwardly,the structure of AC LED dies also provides protection from electricstatic charge (ESD) without the need of an additional circuit, as in theprior art, or a diode fixed on a sub-mount and connected with the LEDs,as in U.S. Pat. No. 6,547,249. Therefore, the purpose of cost saving maybe achieved.

FIG. 5 illustrates the manufacturing of the structure of AC LED dies ina related embodiment. First, two unconnected n-type light-emittinglayers 62 a and 62 b, such as a n-InGaN layer, are first formed on asubstrate 61 made of Al₂O₃, GaAs, GaP or SiC, etc. Next, two p-typelight-emitting layers 63 a and 63 b, such as an p-InGaN layer, areformed on portions of the n-type light-emitting layers 62 a and 62 brespectively. Next, n-type pads 67 a and 67 b are formed on otherportions of the n-type light-emitting layers 62 a and 62 b respectively.Then, p-type pads 66 a and 66 b are formed on the p-type light-emittinglayers 63 a and 63 b respectively. Then a conductive bridge 65 is formedto connect the n-type pad 67 a and the p-type pad 66 b, and aninsulating layer 64 is formed to avoid short-circuiting between then-type pad 67 a, the p-type pad 66 b and the conductive bridge 65.Finally, the p-type pad 67 b is connected to the n-type pad 66 a.

Specifically, the manufacturing of the structure of AC LED dies isillustrated as follows with reference to FIGS. 12A-12F. First, asubstrate 61 is provided. On the substrate 61, n-type light-emittinglayers 62 a and 62 b and p-type light-emitting layers 63 a and 63 b areprovided (from bottom to top), as shown in FIG. 12A. Next, an etchingoperation is performed upon a portion of each of the p-typelight-emitting layers 63 a and 63 b, and a corresponding portion of eachof the n-type light-emitting layers 62 a and 62 b is thus exposed, asshown in FIG. 12B. Next, an insulating layer 64 is formed, as shown inFIG. 12C. The insulating layer 64 may be an oxide layer, for example.Thereafter, specific portions defined for formation of pads in then-type light-emitting layers 62 a and 62 b and p-type light-emittinglayers 63 a and 63 b are etched, as shown in FIG. 12D. Then, n-type pads67 a and 67 b and p-type pads 66 a and 66 b are formed at their definedregions as mentioned, as shown in FIG. 12E. Finally, a conductive bridge65 is formed and connected between the n-type pad 67 a and p-type pad 66b, as shown in FIG. 12F.

In addition, the structure of AC LED dies may be covered by a glue as apackaged structure and fixed on a sub-mount 69, wherein the glue may bea heatsink glue and the sub-mount 69 may be formed with a surface thatacts as a reflective layer to reflect light. Alternatively, bumps 72 maybe formed over the sub-mount 69. Trace 71 are used to connect the n-typepad 67 a with the p-type pad 66 b, and the n-type pad 67 b and thep-type pad 66 a are also electrically connected with each other (notshown in the figure) as shown in FIG. 7.

In addition, the structure of AC LED dies may be connected with a thirdLED micro-die 23 in parallel as shown in FIG. 8, and an asymmetricstructure of AC LED dies is thus formed.

FIG. 9A illustrates another embodiment of the structure of AC LED dies.In this embodiment, a first LED micro-die 21 is connected with a thirdLED micro-die 23 and a second LED micro-die 22 is connected with afourth LED micro-die 24, and the same result as provided by the abovementioned embodiment of the structure of AC LED dies is obtained.Alternatively, the structure of AC LED dies may be further connectedwith a fifth LED micro-die 25 and a sixth LED micro-die 26 in parallel,similar to that shown in FIG. 8, as shown in FIG. 9B. In the aboveembodiments, each of the LED micro-dies may emit light with a singlewavelength or multiple wavelengths when a power supply is supplied, suchas wavelengths corresponding to red, green and blue lights.

In practical usage, a first pad 41 and a second pad 42 are formed on asubstrate 40, and a plurality of units 50 of AC LED dies are coupledtherebetween, as shown in FIGS. 10A and 10B. Each unit 50 of AC LED diescomprises a first LED micro-die 21 and a second LED micro-die 22, asshown in FIG. 3, and has an equivalent circuit shown in FIG. 11. Seenfrom FIG. 11, it may be readily known that the first and second LEDmicro-dies 21 and 22 are arranged in mutually reverse orientations andconnected in parallel, and a plurality of thus formed units 50 isconnected in series. Similar to the description in FIG. 3, the first LEDmicro-die 21 in the unit 50 emits light when a positive-half wavevoltage is in the AC power supply, while the second LED micro-die 22 inthe unit 50 emits light when a negative-half wave voltage is in the ACpower supply (see FIG. 10B). Since the voltage of the AC power supply isvaried between a positive peak and a negative peak with a highfrequency, light emitted alternatively from the LEDs 21 and 22 iscontinuous. Generally, AC voltage has a large swing or a largeamplitude. Even if the voltage on such a unit 50 connected at thedownstream of a wire connecting a plurality of units is slightlydropped, the range of reduction is relatively small, unlike the priorart (only several volts is provided) in which slight changes over thevoltage fed into the LED cause a remarkable difference of luminance ofthe LED. Since the LED has a fast response speed, the AC power supplymay have a frequency up to 50-60 kHz. In addition, any waveform of theAC power supply may be used, provided that the waveform is symmetrical.

As shown in FIGS. 10A and 10B, at least four adjoining light-emittingunits 50 are on the substrate, and each unit 50 comprises at least onemicro-die (21 or 22). Moreover, as shown in FIG. 5 or FIG. 12, eachmicro-die (21 or 22) in FIG. 10A comprises a lower semiconductor layerof first conductivity (62 a or 62 b) on the substrate 61, an uppersemiconductor layer of second conductivity (63 a or 63 b) on the lowersemiconductor layer (62 a or 62 b), and two connecting portions 55 onthe lower semiconductor layer (62 a or 62 b) and the upper semiconductor(63 a or 63 b) respectively. Moreover, the four adjoining light-emittingunits 50 comprise a first group of connecting portions 55 comprisingfour connecting portions disposed substantially at the center of thefour adjoining light-emitting units 50, and a second group of connectingportions comprising another four connecting portions 55 disposedsubstantially at the periphery of the four adjoining light-emittingunits 50. A crossing 56 is surrounded by four micro-dies (21 or 22) onthe substrate, and each of the four micro-dies further comprises ananode and a cathode, wherein either an anode or a cathode of each of themicro-die is nearby the crossing 56.

While the preferred embodiments of the invention have been set forth forthe purpose of disclosure, modifications of the disclosed embodiments ofthe invention as well as other embodiments thereof may occur to thoseskilled in the art. Accordingly, the appended claims are intended tocover all embodiments which do not depart from the spirit and scope ofthe invention.

1. An arrangement of light emitting diodes, comprising: a substrate; andfour adjoining light-emitting units on said substrate, each unitcomprising at least one micro-die, each micro-die comprising a lowersemiconductor layer of first conductivity on said substrate, an uppersemiconductor layer of second conductivity on said lower semiconductorlayer, and two connecting portions on the lower semiconductor layer andthe upper semiconductor layer respectively; wherein the four adjoininglight-emitting units comprise a first group of connecting portionscomprising four connecting portions disposed substantially at the centerof the four adjoining light-emitting units, and a second group ofconnecting portions comprising another four connecting portions disposedsubstantially at the periphery of the four adjoining light-emittingunits.
 2. The arrangement of claim 1, wherein the substrate comprisestwo bonding pads disposed at two opposite ends of the substrate.
 3. Thearrangement of claim 1, wherein the four adjoining light-emitting unitson the substrate are connected serially between said the two bondingpads.
 4. The arrangement of claim 1, wherein each of the four adjoininglight-emitting unit comprises two micro-dies in anti-parallelconnection.
 5. The arrangement of claim 1, wherein the connectingportion is a cathode or an anode of the micro-die.
 6. An arrangement oflight emitting diodes, comprising: a substrate; and four micro-dies onsaid substrate, each micro-die comprising a lower semiconductor layer offirst conductivity on said substrate, an upper semiconductor layer ofsecond conductivity on said lower semiconductor layer, two connectingportions on the lower semiconductor layer and the upper semiconductorlayer respectively; wherein the four micro-dies comprise a first groupof connecting portions comprising four connecting portions disposedsubstantially at the center of the four micro-dies, and a second groupof connecting portions comprising another four connecting portionsdisposed substantially at four corners of the four micro-diesrespectively.
 7. The arrangement of claim 6, wherein the substratecomprises two bonding pads disposed at two opposite ends of thesubstrate.
 8. An arrangement of light emitting diodes, comprising: asubstrate; at least two serial arrays formed on said substrate connectedin anti-parallel; each array having a plurality of light emitting diodesconnected serially; and each light emitting diode comprising a lowersemiconductor layer of first conductivity on said substrate, an uppersemiconductor layer of second conductivity on said lower semiconductorlayer, a lower connecting portion on the lower semiconductor layer andan upper connecting portion on the upper semiconductor layer, said upperand lower connecting portions being disposed on diagonally oppositecorners.
 9. The arrangement of claim 8, wherein at least one of thelight emitting diodes in one array is electrically connected to acorresponding light emitting diode in another array.
 10. A structure oflight-emitting diode, comprising: a substrate; four micro-diespositioned on said substrate; and a crossing surrounded by said fourmicro-dies; wherein each of said four micro-dies comprises a lowersemiconductor layer, an upper semiconductor layer, an anode, and acathode; wherein either said anode or said cathode is nearby saidcrossing.